Thermally Conductive KC ^TM substrates is the best state-of-the-art solution for transferring excess heat from electronic devices to a heat sink. Various elastic substrates are efficient for low power applications. In all other cases, it is strongly recommended to use ceramics.

KC ^TM substrates are based on aluminum oxide (Al2O3), which greatly surpasses elastic materials (such as mica silicates, etc) in thermal conductivity and provides the best performance for electronic devices, regardless of their power.

KC ^TM substrates made from aluminum nitride (AlN) are noted for their outstanding thermal conductivity, comparable to the conductivity of beryllium oxide-based ceramics, which are potentially carcinogenic. They are not only cheaper and safer than modern beryllium ceramics, but also exceed their price / quality ratio.

Table of comparative materials

		Substrate Material / thickness	Thermal conductivity (W/m*K)	Thermal resistance (K/W)	Improved efficiency/ratio
		Mica 0,05 mm	0,7	0,170	1,4
		Nomakon 0,2 mm	2	0,240	1
KC ^TM Ceramics	Al2O3	Al2O3 0,25 mm	25	0,03	8,6
		Al2O3 0,4 mm	25	0,040	5
		Al2O3 0,63 mm	25	0,060	3,3
		Al2O3 1,0 mm	25	0,100	2
	AlN	AlN 0,25mm	180	0,004	60
		AlN 0,5 mm	180	0,007	30
		AlN 1,0 mm	180	0,014	15
		AlN 2,0 mm	180	0,028	7,5

Aluminum Oxide (Al2O3) substrate with T=0,25 mm exceeds thermal conductivity scale of elastic substrate by almost 10 times; that of mica silicate – by 6 times.

KC ^TM substrates have much better finishing surface than in stamped substrates and can be produced in thickness range up to 0.25 mm.

There exists a concern among engineers regarding the fragility of ceramic substrates. However, KC ^TM ceramic substrates of 0.25 mm and thinner are able to bend slightly, and are not very sensitive to possible unevenness in heat sink surfaces to which they are to be applied. KC ^TM substrates can withstand any reasonable pressure - they can be broken, but not crushed!

The high thermal conductivity of KC ^TM substrates enables their use at greater thickness without critical deterioration of thermal resistance. This can reduce stray capacitance between the device and the heat sink, which is critical in devices such as low-frequency power amplifiers. 1-mm thick aluminum nitride based KC ^TM substrate reduces stray capacitance by 20 times and has 10 times lower minimal thermal resistance compared to an analogous mica substrate.

The guaranteed dielectric strength of KC ^TM substrates is at least 16 kV / mm for AlN and over 20kV/mm for Al2O3, which is almost two twice higher than in machine-stamped ceramic substrates.

Aluminum Nitride substrates:

Aluminum Oxide substrates:

Gratify your appliances with KC ^TM ceramics and solve the question of "thermal conductivity + Quality vs. Price" once and for all!